kli-0005-000 1 SI5315-D(s)/SI5315-D(sb) high speed ired features ? colorless transparency lens type ? 5mm (t-1 3/4 ) all plastic mold type ? low power consumption ? high power, high speed type applications ? infrared remote control and free air transmission systems with low forward voltage and comfortable radiation angle requirements in combination with pin photodiodes or phototransistors. outline dimensions unit : mm s s e e m m i i c c o o n n d d u u c c t t o o r r straight type stopper type . * / / 0 . ? ? ? ? . * / . * / . * / / 0 . ? ? ? ? pin connections 1. cathode 2. anode
kli-0005-000 2 SI5315-D ( s ) /SI5315-D ( sb ) absolute maximum ratings characteristic symbol ratings unit power dissipation p d 150 mw forward current i f 100 ma * 1 peak forward current i fp 1 a reverse voltage v r 4 v operating temperature t opr -25 q 85 ? storage temperature t stg -30 q 100 ? * 2 soldering temperature t sol 260 ? for 5 seconds *1.duty ratio = 1/16, pulse width = 0.1ms *2.keep the distance more than 2.0mm from pcb to the bottom of ired package electrical characteristics characteristic symbol test condition min. typ. max. unit forward voltage v f i f = 50ma - 1.5 2.0 v radiant intensity i e i f = 50ma 30 70 - mw/sr peak wavelength p i f = 50ma - 875 - nm spectrum bandwidth i f = 50ma - 45 - nm rise time u s i f = 50ma - 15 - ns reverse current * r v r =4v - - 10 ua * 3 half angle 1 / 2 i f = 50ma - 20 - deg *3. 1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity
kli-0005-000 3 SI5315-D ( s ) / SI5315-D ( sb ) characteristic diagrams fig.4 spectrum distribution fig. 3 i f ? ta fig. 2 i v - i f fig. 1 i f - v f forward current i f [ma] ambient temperature ta [ ? ] relative intensity [%] wavelength [nm] forward voltage v f [v] forward current i f [ma] forward current i f [ma] luminous intensity i v [mcd] fig. 5 radiation diagram relative luminous intensity iv [%]
|
